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| Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2060 DESCRIPTION With TO-220F package Complement to type 2SB1368 Low collector saturation voltage: VCE(SAT)=1.7V(Max) at IC=3A,IB=0.3A Collector power dissipation: PC=25W(TC=25ae ) APPLICATIONS With general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25ae PC Collector dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE 80 80 5 4 0.4 2.0 W UNIT V V V A A JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IE=10mA ;IC=0 IC=3A ;IB=0.3A IC=3A;VCE=5V VCB=80V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 40 15 50 8.0 90 MIN 80 5 0.45 1.0 TYP. 2SD2060 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V V 1.5 1.5 30 100 240 |I |I V V A A MHz pF hFE-1 Classifications R 40-80 O 70-140 Y 120-240 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2060 Fig.2 Outline dimensions JMnic |
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